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ISSI

ISSI Now Sampling the Read-While-Write (RWW) Octal Flash

ISSI offers a complete portfolio of Octal Memory that supports high-speed, low pin count devices utilizing the JEDEC xSPI interface.

The Octal (xSPI) interface enhances system performance, simplifies design, and reduces system cost.

ISSI’s new family of Octal products include: Octal (xSPI) FlashOctal RAM, and Octal MCP solutions. Octal (xSPI) Flash memory delivers the performance needed for embedded systems that require fast, instant boot times.

ISSI’s Octal Flash delivers 400 MB/s of read bandwidth, which is over 4x times faster than a Quad SPI Flash. The Read While Write (RWW) feature further enhances the Octal (xSPI) family by allowing these devices to be read, while being programmed. Applications such as OTA (Over The Air) update require RWW functionality.

256Mb/512Mb RWW samples are available now. 64Mb RWW samples are expected to be available May-June 2024.

For more details or if you would like samples for your design, please contact Allyanz.

ISSI releases new 4Gb and 8Gb LPDDR4/4X DRAM

ISSI has begun production of its new 4Gb (x16) and 8Gb (x32) LPDDR4/4X DRAM.

Both density DRAM are supported with Industrial (4Gb IS43LQ16256B, 8Gb IS43LQ32256B) & Automotive (4Gb IS46LQ16256B), 8Gb IS46LQ32256B) grades.

Data rate options supported include 3733Mbps (-053) & 3200Mbps (-062).

LPDDR4X is also an available ordering option, such as IS43LQ16256BL-062BLI.

Supported in 200-ball BGA package, which is 10mm x 14mm, & 1.1mm thickness.

This adds to ISSI’s extensive offering of LPDDR4/4X DRAM in 2Gb, 4Gb, and 8Gb densities.

Please contact Allyanz for more details, or if you need samples for your design.

ISSI Now Offering UFS 2.1/2.2 – Universal Flash Storage

ISSI Now Offering UFS 2.1/2.2 – Universal Flash Storage

LVDS Serial Interface

UFS is an advanced storage interface ideal for applications requiring high-performance and low power consumption. UFS improves read and write performance of flash memory in two ways. First, & unlike eMMC, there are dedicated channels for reading and writing data allowing for simultaneous read/write data flow.

The second advantage with UFS storage is Command Queuing – the efficient grouping and reordering of read or write commands, to maximise performance throughput.

ISSI’s UFS product family provides the ideal embedded storage solution for the Automotive, Industrial, Medical, Networking, and Consumer applications, which require high performance, endurance, and low power across a wide range of operating temperatures, with long-term support.

These products are available in Industrial as well as Automotive grade.

ISSI’s UFS integrates NAND flash memory and an intelligent UFS controller in a single small form factor BGA package. The controller implements all the algorithms for reliable NAND flash management in addition to all the UFS functionality and advanced features.

ISSI’s UFS products are optimised for efficient throughput, system performance and reliability, delivering superior sequential and random read/write performance, while offering near zero idle power consumption.

ISSI is currently sampling 64 GB, 128 GB & 256 GB devices, supporting UFS 2.1, and UFS 2.2 (uses 1.8V IO Voltage)

ISSIUFS data table

Support for UFS 3.1 (uses 1.2V IO Voltage) devices will follow.

To learn more or if you would like samples for your design, please contact Allyanz.

ISSI sampling AEC-Q100 Qualified SLC NAND Flash for Automotive & Industrial Applications

ISSI sampling AEC-Q100 Qualified SLC NAND Flash for Automotive & Industrial Applications
Integrated Silicon Solution, Inc. (ISSI), a leader in advanced memory solutions, is now sampling Automotive grade Parallel SLC NAND Flash.

ISSI’s SLC NAND Flash devices support a wide operating temperature range of -40C to 105C, making them ideal for next generation automotive, industrial and Internet of Things (IoT) applications.

Both the SPI NAND and parallel NAND Flash devices are AEC-Q100 qualified meeting the stringent automotive qualification requirements.

ISSI offers parallel SLC NAND in 1Gb, 2Gb, 4Gb & 8Gb densities.

SLC NAND Flash memory is ideally suited for performance oriented applications where high reliability is needed.

SLC stores 1 bit of data per memory cell and offers fast read and write capabilities.

These devices work with systems requiring 1 bit or 4 bit ECC algorithms and offer 100K cycles of endurance with 10 years of data retention.

Please contact Allyanz for more details, including samples for your design.

ISSI 4Gb LP DDR2 DRAM Sampling

ISSI is pleased to announce it is sampling its new 4Gb LP DDR2 DRAM, IS43LD32128B, which is available in a 10mm x 11.5mm, 134-ball package.

ISIS LPDDR2

  • IS43LD32128B-18BLI

This DRAM, with Vcc 1.2/1.8V, supports data rates up to 1066Mbps (533MHz), while being backward compatible with slower speeds.

LPDDR2 DRAM is a popular memory reference supported by multiple ASSP manufacturers for Automotive, Industrial, Consumer & Communication amongst others.

ISIS LPDDR2
Please contact Allyanz to discuss your design requirements, or for FREE samples.

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