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Memory

ISSI ANNOUNCES 64Mb and 32Mb Pseudo SRAMs (PSRAMs) TARGETED FOR WIRELESS, INDUSTRIAL, EMBEDDED, and AUTOMOTIVE APPLICATIONS

Integrated Silicon Solution, Inc., a leader in advanced memory solutions, has added 64Mb and 32Mb density devices to their line of Pseudo SRAMs. These new devices add to the previously released 4Mb and 8Mb parts, and give the design engineer a wide range of densities from which to choose to best fit the application’s requirements. These PSRAMs are designed to provide the characteristics and ease of use of an SRAM, but with the improved density and cost reduction associated with using a DRAM.

The 64Mb is organized as 4Mx16 and the 32Mb is 2Mx16. The IS66WVE2M16ALL/BLL and the IS66WVE4M16ALL/BLL are the 1.8V and 3.3V options of the asynchronous solution for this product family. The IS66WVC2M16ALL, IS66WVD2M16ALL, IS66WVC4M16ALL and the IS66WVD4M16ALL are the CRAM 1.5 and CRAM 2.0 options of this product family. As such, this product line provides the designer with a variety of high density, cost effective, low power memory solutions.

In these products, refresh of the DRAM cells is handled internally, eliminating the need for an external refresh controller. Partial Array Refresh (PAR), low standby current and Deep Power Down (DPD) modes of these products makes it ideal for low power applications. The CRAM 1.5 option adds the synchronous / burst interface mode, an on-die temperature sensor for temperature compensated refresh (TCR), fixed latency, and drive strength control for the outputs. In addition to the CRAM 1.5 feature set, CRAM 2.0 adds a multiplexed address and data bus for reduced pin count.

This cost effective, low power, high density memory combined with extended temperature, and options that include the Know Good Die (KGD) format make the product line perfect for wireless, industrial, embedded, and automotive applications.

For more details on these new Pseudo SRAMS from ISSI, please contact us.

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ISSI Releases 1 Gb High Speed DDR2 SDRAM for Automotive, Networking, Telecommunications, and Industrial Applications

ISSI, a leader in advanced memory solutions, has added the 1 Gigabit density to their family of DDR2 SDRAMs. The first device at this new density is the IS43DR16640A which is organized as 64Mx16 and packaged in an 84-ball BGA. This on-going expansion of the DDR2 SDRAM product family adds to ISSI’s already extensive offering of DRAM devices.

ISSI 400MHz - 72 MB Synchronous SRAM

This new device is available with clock speeds up to 533MHz (DDR2-1066), providing a data transfer rate of 4 gigabytes/sec in 32 bit systems. In addition to this new 1Gb device, ISSI also offers 512Mb and 256Mb DDR2 devices, with all three densities available in commercial, industrial and automotive grades. The 256Mb density includes 8Mx32 and 16Mx16 organizations and for the 512Mb density 32Mx16 and 64Mx8 organizations are available. ISSI plans to release x8 bit wide configurations of the 256Mb, and 1Gb devices later in 2010. The DDR2 DRAM product family from ISSI operates from a single 1.8V supply voltage.

For more details on the 1Gb DDR2 SDRAM, or other SRAM or DRAM devices from ISSI, please contact us.

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ISSI SHIPPING 400Mhz, 72Mb Synchronous SRAM

ISSI is now sampling its 72Mb IS61DDPB22M36 and IS61DDPB24M18 synchronous, high-performance CMOS SRAM devices. These SRAMs are available in 18 & 36 bit configurations, with a Double Data Rate (DDR-IIP) interface for read and write input ports.

72Mb IS61DDPB22M36

Other features these DDR-IIP Synchronous SRAM offer include:

  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Common data input/output bus.
  • Synchronous pipeline read with self-timed late write operation.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K) for address and control registering at rising edges only.

The devices are available in commercial & industrial temperature ranges.
For more details on these high density, high performance DDR-IIP Synchronous SRAM from ISSI, please contact us.

For more details about DDR-IIP Synchronous SRAM, please contact us.

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ISSI Releases 512Mb & 1Gb DDR2 SDRAM

lattice single chip non volatile latticexp2 fpgas

ISSI has released 512Mb and 1Gb DDR2 SDRAM in 8 bit, 16 bit & 32 bit configurations.These DDR2 SDRAM are available in clock frequencies up to 1066Mhz, in Pb-free 60, 84 & 128 BGA packages.DDR2 SDRAM from ISSI are available in Commercial, Industrial & Automotive temperature grades.

For more information please contact us.

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Logic Devices sampling DDR3 IMOD

LOGIC Devices, a developer of high performance, low power integrated circuits; has announced plans to start sampling its’ DDR3 IMOD products in Q2’09. LOGIC Devices first DDR3 device is a 4.0 GB, 64 M x 64, DDR3-1333 DRAM available in Industrial (-40C to +85C), Extended (-40C to +105C) and Mil temperature (-55C to +125C) grades, and packaged in a 16mm x 22mm, thermally enhanced, 271ball -1.00mm pitch, PBGA. These devices provide a 40% space savings over the use of (4) 96 ball, 9.00+mm x 16.00+mm BGAs as well as a 30% decrease in total I/O, all while providing major improvements in heat dissipation via use of proprietary packaging IP.

For more information please contact us.

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