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ISSI adds 256Mb DDR2 SDRAM to portfolio, targeted for Automotive, Networking, Telecom, and Industrial Applications
Integrated Silicon Solution, Inc. (Nasdaq: ISSI), a leader in advanced memory solutions, has added the 256Mb density to their family of DDR2 SDRAMs. This addition expands ISSI’s DDR2 SDRAM family to include densities of 256Mb, 512Mb and 1Gb. This expansion of the DDR2 SDRAM product family adds to ISSI’s already extensive offering of SDR, DDR and DDR2 SDRAMs.
The 256Mb density is offered as 8Mx32, 16Mx16 and 32Mx8, in BGA packages with speeds up to 400Mhz (DDR2-800), giving design engineers a lower density option when a 512Mb device is not required. These devices operate from a single supply voltage of 1.8V
DDR2 SDRAMs are used in a variety of applications including automotive telematics and infotainment, networking/telecom access nodes, VoIP, switches, routers, and packet optical transport, plus many industrial applications. These applications typically require long term production support, which ISSI specialise in.
Samples and volume production support for the 8Mx32, IS43DR32800A (Standard Page Size) and the IS43DR32801A (Reduced Page Size) are available now.
Samples of the 16Mx16, IS43DR16160A and 32Mx8, IS43DR83200B are available now with volume production support beginning in Q1 2011. Samples of automotive versions of the 8Mx32, IS46DR32801A and the 16Mx16, IS46DR16160A are also available now.
For more details or pricing regarding these 256M DDR2 SDRAM, or any other memory solutions from ISSI, please contact us.
ISSI ANNOUNCES 64Mb and 32Mb Pseudo SRAMs (PSRAMs) TARGETED FOR WIRELESS, INDUSTRIAL, EMBEDDED, and AUTOMOTIVE APPLICATIONS
Integrated Silicon Solution, Inc., a leader in advanced memory solutions, has added 64Mb and 32Mb density devices to their line of Pseudo SRAMs. These new devices add to the previously released 4Mb and 8Mb parts, and give the design engineer a wide range of densities from which to choose to best fit the application’s requirements. These PSRAMs are designed to provide the characteristics and ease of use of an SRAM, but with the improved density and cost reduction associated with using a DRAM.
The 64Mb is organized as 4Mx16 and the 32Mb is 2Mx16. The IS66WVE2M16ALL/BLL and the IS66WVE4M16ALL/BLL are the 1.8V and 3.3V options of the asynchronous solution for this product family. The IS66WVC2M16ALL, IS66WVD2M16ALL, IS66WVC4M16ALL and the IS66WVD4M16ALL are the CRAM 1.5 and CRAM 2.0 options of this product family. As such, this product line provides the designer with a variety of high density, cost effective, low power memory solutions.
In these products, refresh of the DRAM cells is handled internally, eliminating the need for an external refresh controller. Partial Array Refresh (PAR), low standby current and Deep Power Down (DPD) modes of these products makes it ideal for low power applications. The CRAM 1.5 option adds the synchronous / burst interface mode, an on-die temperature sensor for temperature compensated refresh (TCR), fixed latency, and drive strength control for the outputs. In addition to the CRAM 1.5 feature set, CRAM 2.0 adds a multiplexed address and data bus for reduced pin count.
This cost effective, low power, high density memory combined with extended temperature, and options that include the Know Good Die (KGD) format make the product line perfect for wireless, industrial, embedded, and automotive applications.
For more details on these new Pseudo SRAMS from ISSI, please contact us.
ISSI Releases 1 Gb High Speed DDR2 SDRAM for Automotive, Networking, Telecommunications, and Industrial Applications
ISSI, a leader in advanced memory solutions, has added the 1 Gigabit density to their family of DDR2 SDRAMs. The first device at this new density is the IS43DR16640A which is organized as 64Mx16 and packaged in an 84-ball BGA. This on-going expansion of the DDR2 SDRAM product family adds to ISSI’s already extensive offering of DRAM devices.
This new device is available with clock speeds up to 533MHz (DDR2-1066), providing a data transfer rate of 4 gigabytes/sec in 32 bit systems. In addition to this new 1Gb device, ISSI also offers 512Mb and 256Mb DDR2 devices, with all three densities available in commercial, industrial and automotive grades. The 256Mb density includes 8Mx32 and 16Mx16 organizations and for the 512Mb density 32Mx16 and 64Mx8 organizations are available. ISSI plans to release x8 bit wide configurations of the 256Mb, and 1Gb devices later in 2010. The DDR2 DRAM product family from ISSI operates from a single 1.8V supply voltage.
For more details on the 1Gb DDR2 SDRAM, or other SRAM or DRAM devices from ISSI, please contact us.