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ISSI Announces Sampling of RLDRAM(R) 3 Memory
Helps Enable 100G Ethernet and Transport Applications
Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, is sampling RLDRAM 3 memory. RLDRAM 3 memory offers a 576Mb density with the DRAM industry’s fastest random access times (tRC). The device is ideally suited to 100G networking applications such as Packet Optical Transport, Carrier Ethernet Switches and Routers (CESR), and Core and Edge Routers.
Service providers are combining residential, business, and mobile services onto a single IP network. This is driving the need for a cost-effective, high-performance memory with fast random access rates (tRC). RLDRAM 3 memory offers a new Multibank WRITE feature that allows random READ accesses every 2ns – on par with high-speed SRAM but with the density and cost-effectiveness that comes with DRAM.
ISSI offer RLDRAM 3 memory in Industrial and Commercial temperature ranges and in Leaded and Lead-free packages.
For more details on ISSI’s range of RLDRAM(R) 3 Memory, please contact Allyanz.
ISSI Releases 1 Gb High Speed DDR2 SDRAM for Automotive, Networking, Telecommunications, and Industrial Applications
ISSI, a leader in advanced memory solutions, has added the 1 Gigabit density to their family of DDR2 SDRAMs. The first device at this new density is the IS43DR16640A which is organized as 64Mx16 and packaged in an 84-ball BGA. This on-going expansion of the DDR2 SDRAM product family adds to ISSI’s already extensive offering of DRAM devices.
This new device is available with clock speeds up to 533MHz (DDR2-1066), providing a data transfer rate of 4 gigabytes/sec in 32 bit systems. In addition to this new 1Gb device, ISSI also offers 512Mb and 256Mb DDR2 devices, with all three densities available in commercial, industrial and automotive grades. The 256Mb density includes 8Mx32 and 16Mx16 organizations and for the 512Mb density 32Mx16 and 64Mx8 organizations are available. ISSI plans to release x8 bit wide configurations of the 256Mb, and 1Gb devices later in 2010. The DDR2 DRAM product family from ISSI operates from a single 1.8V supply voltage.
For more details on the 1Gb DDR2 SDRAM, or other SRAM or DRAM devices from ISSI, please contact us.
ISSI SHIPPING 400Mhz, 72Mb Synchronous SRAM
ISSI is now sampling its 72Mb IS61DDPB22M36 and IS61DDPB24M18 synchronous, high-performance CMOS SRAM devices. These SRAMs are available in 18 & 36 bit configurations, with a Double Data Rate (DDR-IIP) interface for read and write input ports.
Other features these DDR-IIP Synchronous SRAM offer include:
- On-chip delay-locked loop (DLL) for wide data valid window.
- Common data input/output bus.
- Synchronous pipeline read with self-timed late write operation.
- Fixed 2-bit burst for read and write operations.
- Clock stop support.
- Two input clocks (K and K) for address and control registering at rising edges only.
The devices are available in commercial & industrial temperature ranges.
For more details on these high density, high performance DDR-IIP Synchronous SRAM from ISSI, please contact us.
For more details about DDR-IIP Synchronous SRAM, please contact us.
ISSI Releases 512Mb & 1Gb DDR2 SDRAM
ISSI has released 512Mb and 1Gb DDR2 SDRAM in 8 bit, 16 bit & 32 bit configurations.These DDR2 SDRAM are available in clock frequencies up to 1066Mhz, in Pb-free 60, 84 & 128 BGA packages.DDR2 SDRAM from ISSI are available in Commercial, Industrial & Automotive temperature grades.
For more information please contact us.
ISSI ultra Low Power SRAM
ISSI is now sampling its latest 1Mb Ultra-Low Power SRAM. This series of new SRAM offers significant power savings, with typical standby current as low as 0.6uA.
The devices are available in Standard, Industrial & Automotive temperature grades.
This innovative new SRAM reinforces ISSI’s long-term commitment to SRAM.
For more information please contact us.