ISSI Releases 1 Gb High Speed DDR2 SDRAM for Automotive, Networking, Telecommunications, and Industrial Applications
ISSI, a leader in advanced memory solutions, has added the 1 Gigabit density to their family of DDR2 SDRAMs. The first device at this new density is the IS43DR16640A which is organized as 64Mx16 and packaged in an 84-ball BGA. This on-going expansion of the DDR2 SDRAM product family adds to ISSI’s already extensive offering of DRAM devices.
This new device is available with clock speeds up to 533MHz (DDR2-1066), providing a data transfer rate of 4 gigabytes/sec in 32 bit systems. In addition to this new 1Gb device, ISSI also offers 512Mb and 256Mb DDR2 devices, with all three densities available in commercial, industrial and automotive grades. The 256Mb density includes 8Mx32 and 16Mx16 organizations and for the 512Mb density 32Mx16 and 64Mx8 organizations are available. ISSI plans to release x8 bit wide configurations of the 256Mb, and 1Gb devices later in 2010. The DDR2 DRAM product family from ISSI operates from a single 1.8V supply voltage.
For more details on the 1Gb DDR2 SDRAM, or other SRAM or DRAM devices from ISSI, please contact us.
ISSI is now sampling its 72Mb IS61DDPB22M36 and IS61DDPB24M18 synchronous, high-performance CMOS SRAM devices. These SRAMs are available in 18 & 36 bit configurations, with a Double Data Rate (DDR-IIP) interface for read and write input ports.
Other features these DDR-IIP Synchronous SRAM offer include:
- On-chip delay-locked loop (DLL) for wide data valid window.
- Common data input/output bus.
- Synchronous pipeline read with self-timed late write operation.
- Fixed 2-bit burst for read and write operations.
- Clock stop support.
- Two input clocks (K and K) for address and control registering at rising edges only.
The devices are available in commercial & industrial temperature ranges.
For more details on these high density, high performance DDR-IIP Synchronous SRAM from ISSI, please contact us.
For more details about DDR-IIP Synchronous SRAM, please contact us.