ISSI has begun production of its new 4Gb (x16) and 8Gb (x32) LPDDR4/4X DRAM.
Data rate options supported include 3733Mbps (-053) & 3200Mbps (-062).
LPDDR4X is also an available ordering option, such as IS43LQ16256BL-062BLI.
Supported in 200-ball BGA package, which is 10mm x 14mm, & 1.1mm thickness.
This adds to ISSI’s extensive offering of LPDDR4/4X DRAM in 2Gb, 4Gb, and 8Gb densities.
Please contact Allyanz for more details, or if you need samples for your design.
ISSI Now Offering UFS 2.1/2.2 – Universal Flash Storage
UFS is an advanced storage interface ideal for applications requiring high-performance and low power consumption. UFS improves read and write performance of flash memory in two ways. First, & unlike eMMC, there are dedicated channels for reading and writing data allowing for simultaneous read/write data flow.
The second advantage with UFS storage is Command Queuing – the efficient grouping and reordering of read or write commands, to maximise performance throughput.
ISSI’s UFS product family provides the ideal embedded storage solution for the Automotive, Industrial, Medical, Networking, and Consumer applications, which require high performance, endurance, and low power across a wide range of operating temperatures, with long-term support.
These products are available in Industrial as well as Automotive grade.
ISSI’s UFS integrates NAND flash memory and an intelligent UFS controller in a single small form factor BGA package. The controller implements all the algorithms for reliable NAND flash management in addition to all the UFS functionality and advanced features.
ISSI’s UFS products are optimised for efficient throughput, system performance and reliability, delivering superior sequential and random read/write performance, while offering near zero idle power consumption.
ISSI is currently sampling 64 GB, 128 GB & 256 GB devices, supporting UFS 2.1, and UFS 2.2 (uses 1.8V IO Voltage)
Support for UFS 3.1 (uses 1.2V IO Voltage) devices will follow.
To learn more or if you would like samples for your design, please contact Allyanz.
ISSI’s SLC NAND Flash devices support a wide operating temperature range of -40C to 105C, making them ideal for next generation automotive, industrial and Internet of Things (IoT) applications.
Both the SPI NAND and parallel NAND Flash devices are AEC-Q100 qualified meeting the stringent automotive qualification requirements.
ISSI offers parallel SLC NAND in 1Gb, 2Gb, 4Gb & 8Gb densities.
SLC NAND Flash memory is ideally suited for performance oriented applications where high reliability is needed.
SLC stores 1 bit of data per memory cell and offers fast read and write capabilities.
These devices work with systems requiring 1 bit or 4 bit ECC algorithms and offer 100K cycles of endurance with 10 years of data retention.
Please contact Allyanz for more details, including samples for your design.
ISSI is pleased to announce it is sampling its new 4Gb LP DDR2 DRAM, IS43LD32128B, which is available in a 10mm x 11.5mm, 134-ball package.
This DRAM, with Vcc 1.2/1.8V, supports data rates up to 1066Mbps (533MHz), while being backward compatible with slower speeds.
LPDDR2 DRAM is a popular memory reference supported by multiple ASSP manufacturers for Automotive, Industrial, Consumer & Communication amongst others.
Please contact Allyanz to discuss your design requirements, or for FREE samples.
ISSI is excited to offer a new family of SPI flash devices to address the low density market. New devices will be available starting at 256Kb to 4Mb.
ISSI’s IS25LP-E (3V) and IS25WP-E (1.8V) SPI flash series will be fully compatible to the industry standard 25-series footprint and will offer a longevity plan for the current IS25LQ (3V) and IS25WQ (1.8V) low density devices.
Devices will be offered in 3V and 1.8V with read speeds up to 104Mhz.
For more information or samples please contact Allyanz.