Specialist Supplier Of Electronic Components, Semiconductors & Rugged Electronic Systems.

ISSI has begun production of its new 4Gb (x16) and 8Gb (x32) LPDDR4/4X DRAM.

Both density DRAM are supported with Industrial (4Gb IS43LQ16256B, 8Gb IS43LQ32256B) & Automotive (4Gb IS46LQ16256B), 8Gb IS46LQ32256B) grades.

Data rate options supported include 3733Mbps (-053) & 3200Mbps (-062).

LPDDR4X is also an available ordering option, such as IS43LQ16256BL-062BLI.

Supported in 200-ball BGA package, which is 10mm x 14mm, & 1.1mm thickness.

This adds to ISSI’s extensive offering of LPDDR4/4X DRAM in 2Gb, 4Gb, and 8Gb densities.

Please contact Allyanz for more details, or if you need samples for your design.

ISSI Now Offering UFS 2.1/2.2 – Universal Flash Storage

UFS is an advanced storage interface ideal for applications requiring high-performance and low power consumption. UFS improves read and write performance of flash memory in two ways. First, & unlike eMMC, there are dedicated channels for reading and writing data allowing for simultaneous read/write data flow.

The second advantage with UFS storage is Command Queuing – the efficient grouping and reordering of read or write commands, to maximise performance throughput.

ISSI’s UFS product family provides the ideal embedded storage solution for the Automotive, Industrial, Medical, Networking, and Consumer applications, which require high performance, endurance, and low power across a wide range of operating temperatures, with long-term support.

These products are available in Industrial as well as Automotive grade.

ISSI’s UFS integrates NAND flash memory and an intelligent UFS controller in a single small form factor BGA package. The controller implements all the algorithms for reliable NAND flash management in addition to all the UFS functionality and advanced features.

ISSI’s UFS products are optimised for efficient throughput, system performance and reliability, delivering superior sequential and random read/write performance, while offering near zero idle power consumption.

ISSI is currently sampling 64 GB, 128 GB & 256 GB devices, supporting UFS 2.1, and UFS 2.2 (uses 1.8V IO Voltage)

Support for UFS 3.1 (uses 1.2V IO Voltage) devices will follow.

To learn more or if you would like samples for your design, please contact Allyanz.

Integrated Silicon Solution, Inc. (ISSI), a leader in advanced memory solutions, is now sampling Automotive grade Parallel SLC NAND Flash.

ISSI’s SLC NAND Flash devices support a wide operating temperature range of -40C to 105C, making them ideal for next generation automotive, industrial and Internet of Things (IoT) applications.

Both the SPI NAND and parallel NAND Flash devices are AEC-Q100 qualified meeting the stringent automotive qualification requirements.

ISSI offers parallel SLC NAND in 1Gb, 2Gb, 4Gb & 8Gb densities.

SLC NAND Flash memory is ideally suited for performance oriented applications where high reliability is needed.

SLC stores 1 bit of data per memory cell and offers fast read and write capabilities.

These devices work with systems requiring 1 bit or 4 bit ECC algorithms and offer 100K cycles of endurance with 10 years of data retention.

Please contact Allyanz for more details, including samples for your design.